HS8K11TB
RoHS 
RoHS compliant
RoHS compliantPackage 8-UDFN Exposed Pad
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 7A/11A HSML
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Buying Options
Total Price: USD $0.54
Unit Price: USD $0.5368
≥1 USD $0.5368
≥10 USD $0.46464
≥100 USD $0.321992
≥500 USD $0.269016
≥1000 USD $0.228958
Inventory: 1100
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-UDFN Exposed Pad
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 2W
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code S-PDSO-N8
Number of Elements 2
Configuration COMPLEX
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN SOURCE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 17.9m Ω @ 7A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 7A 11A
Gate Charge (Qg) (Max) @ Vgs 11.1nC @ 10V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 11A
Drain Current-Max (Abs) (ID) 7A
Drain-source On Resistance-Max 0.0291Ohm
Pulsed Drain Current-Max (IDM) 28A
DS Breakdown Voltage-Min 30V
Avalanche Energy Rating (Eas) 3.6 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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