HP8M51TB1
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
HP8M51TB1 IS LOW ON-RESISTANCE A
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Buying Options
Total Price: USD $1.96
Unit Price: USD $1.9624
≥1 USD $1.9624
≥10 USD $1.62888
≥100 USD $1.296416
≥500 USD $1.096955
≥1000 USD $0.93075
Inventory: 989
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 16 Weeks
Physical
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F6
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W Ta
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 170m Ω @ 4.5A, 10V, 290m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 600pF @ 50V
Current - Continuous Drain (Id) @ 25°C 4.5A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC, 26.2nC @ 10V
Drain to Source Voltage (Vdss) 100V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.18Ohm
Pulsed Drain Current-Max (IDM) 18A
DS Breakdown Voltage-Min 100V
Avalanche Energy Rating (Eas) 2.9 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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