HP8KA1TB
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 14A HSOP8
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Buying Options
Total Price: USD $1.03
Unit Price: USD $1.0296
≥1 USD $1.0296
≥10 USD $0.84216
≥100 USD $0.65516
≥500 USD $0.555298
≥1000 USD $0.452355
Inventory: 2549
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 20 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Cut Tape (CT)
Published 2015
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Max Power Dissipation 3W
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Power - Max 3W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 2.5V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Continuous Drain Current (ID) 14A
Drain-source On Resistance-Max 0.007Ohm
DS Breakdown Voltage-Min 30V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status ROHS3 Compliant
Alternative Model
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