FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 250mA
Turn-Off Delay Time 18 ns
Drain to Source Voltage (Vdss) 60V
Input Capacitance (Ciss) (Max) @ Vds 15pF @ 25V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Rds On (Max) @ Id, Vgs 2.4 Ω @ 250mA, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 3.5 ns
Operating Mode ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 120mW
Subcategory FET General Purpose Power
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ