FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 0.2A
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 200mA
Turn-Off Delay Time 17 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 115pF @ 10V
Vgs(th) (Max) @ Id 1V @ 100μA
Rds On (Max) @ Id, Vgs 1.2 Ω @ 200mA, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Time@Peak Reflow Temperature-Max (s) 10
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 150mW
Subcategory Other Transistors
Terminal Finish Tin/Copper (Sn/Cu)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ