BSM180D12P2C101
RoHS 
RoHS compliant
RoHS compliantPackage Module
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 1200V 180A MODULE
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Buying Options
Total Price: USD $415.5
Unit Price: USD $415.5008
≥1 USD $415.5008
≥10 USD $399.88007
Inventory: 16
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 25 Weeks
Physical
Mount Screw
Package / Case Module
Number of Pins 10
Technical
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
Max Power Dissipation 1.13kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X8
Number of Elements 2
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Power - Max 1130W
FET Type 2 N-Channel (Half Bridge)
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 35.2mA
Input Capacitance (Ciss) (Max) @ Vds 23000pF @ 10V
Current - Continuous Drain (Id) @ 25°C 204A Tc
Drain to Source Voltage (Vdss) 1200V 1.2kV
Continuous Drain Current (ID) 180A
Threshold Voltage 2.7V
Gate to Source Voltage (Vgs) 22V
Pulsed Drain Current-Max (IDM) 360A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Silicon Carbide (SiC)
Nominal Vgs 2.7 V
Dimensions
Height 21.1mm
Length 122mm
Width 45.6mm
Compliance
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
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