FDS6982
RoHS 
RoHS compliant
RoHS compliantPackage 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
N-CHANNEL POWER MOSFET
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Buying Options
Total Price: USD $0.25
Unit Price: USD $0.2489
≥1 USD $0.2489
≥10 USD $0.20425
≥100 USD $0.19855
≥500 USD $0.1919
≥1000 USD $0.18525
Inventory: 1263
Minimum: 1
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Technical Details
Compliance
RoHS Status ROHS3 Compliant
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 20A
Drain-source On Resistance-Max 0.028Ohm
Drain Current-Max (Abs) (ID) 6.3A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 5V
Current - Continuous Drain (Id) @ 25°C 6.3A 8.6A
Input Capacitance (Ciss) (Max) @ Vds 760pF @ 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 28m Ω @ 6.3A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Power - Max 900mW
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Qualification Status COMMERCIAL
JESD-30 Code R-PDSO-G8
Pin Count 8
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish MATTE TIN
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Pbfree Code yes
JESD-609 Code e3
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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