FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 20V
Pulsed Drain Current-Max (IDM) 12A
Drain-source On Resistance-Max 0.16Ohm
Drain Current-Max (Abs) (ID) 2.8A
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.8A
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 160m Ω @ 2.8A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status COMMERCIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Finish NICKEL PALLADIUM GOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ