Operating Temperature -40°C~150°C TJ
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 15
Terminal Position ZIG-ZAG
Reach Compliance Code unknown
Qualification Status COMMERCIAL
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.5m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A
Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drain Current-Max (Abs) (ID) 60A
Drain-source On Resistance-Max 0.0045Ohm
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 794 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR