FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 40V
Drain-source On Resistance-Max 0.033Ohm
Drain Current-Max (Abs) (ID) 7A
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 7A
Drain to Source Voltage (Vdss) 20V
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 10V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Rds On (Max) @ Id, Vgs 21m Ω @ 2A, 4.5V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Turn On Delay Time 330 ns
Operating Mode ENHANCEMENT MODE
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Base Part Number MTMC8E2A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code unknown
Peak Reflow Temperature (Cel) NOT SPECIFIED
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ