MTM78E2B0LBF
RoHS 
RoHS compliant
RoHS compliantPackage 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET, DUAL N-CH, 20V, 4A, WSMINI8-F1-B - More Details
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Buying Options
Total Price: USD $0.14
Unit Price: USD $0.13965
≥1 USD $0.13965
≥10 USD $0.11495
≥100 USD $0.11115
≥500 USD $0.1083
≥1000 USD $0.1045
Inventory: 20902
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory FET General Purpose Power
Max Power Dissipation 700mW
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MTM78E2B
Number of Elements 2
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 700mW
Turn On Delay Time 200 ns
Power - Max 150mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 2A, 4V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Rise Time 500ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 1.5 μs
Turn-Off Delay Time 2 μs
Continuous Drain Current (ID) 4A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 4A
Drain-source On Resistance-Max 0.025Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Nominal Vgs 850 mV
Dimensions
Height 600μm
Length 2mm
Width 1.7mm
Compliance
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Alternative Model
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