FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) 4.8A
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 16V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 33m Ω @ 6.2A, 4.5V
FET Type 2 P-Channel (Dual)
Element Configuration Dual
Operating Temperature (Max) 150°C
Max Power Dissipation 750mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)