FET Technology METAL-OXIDE SEMICONDUCTOR
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 4.6A
Drain to Source Voltage (Vdss) 40V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 34m Ω @ 5.8A, 10V
FET Type 2 N-Channel (Dual)
Element Configuration Dual
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Max Power Dissipation 1.29W
Subcategory FET General Purpose Power
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)