NVMD6N03R2G
RoHS
/
Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 30nC @ 10V 6A 1.29W 30V
PDF
/
Buying Options
Total Price: USD $0.45
Unit Price: USD $0.447467
≥1 USD $0.447467
≥10 USD $0.422135
≥100 USD $0.398243
≥500 USD $0.375698
≥1000 USD $0.354438
Inventory: 1165
Minimum: 1
-
+
Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ULTRA LOW ON RESISTANCE
Max Power Dissipation 1.29W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NTMD6N03
Reference Standard AEC-Q101
JESD-30 Code R-PDSO-G8
Number of Elements 2
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 325 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 30A
Drain-source On Resistance-Max 0.032Ohm
Drain Current-Max (Abs) (ID) 6A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 6A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 24V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 32m Ω @ 6A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Compliance
RoHS Status RoHS Compliant
Radiation Hardening No
Recommended For You
NVMD6N03R2G+price,NVMD6N03R2G+datasheet,NVMD6N03R2G+in stock,buy+NVMD6N03R2G,finder+NVMD6N03R2G,NVMD6N03R2G+tutorials,NVMD6N03R2G+download