NTZD3154NT2G
RoHS
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Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 2.5nC @ 4.5V 540mA 250mW 4ns
PDF
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Buying Options
Total Price: USD $0.38
Unit Price: USD $0.3784
≥1 USD $0.3784
≥10 USD $0.26664
≥100 USD $0.134728
≥500 USD $0.10993
≥1000 USD $0.081567
≥3000 USD $0.068622
Inventory: 4013
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 day ago)
Physical
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTZD3154N
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 550m Ω @ 540mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 150pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 4ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 540mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.54A
Drain-source On Resistance-Max 0.55Ohm
Drain to Source Breakdown Voltage 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 20 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
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