NTZD3152PT5G
RoHS
/
Package SOT-563, SOT-666
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET -20V -430mA Dual P-Channel
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature ESD PROTECTION, LOW THRESHOLD
Voltage - Rated DC -20V
Max Power Dissipation 250mW
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Current Rating -430mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTZD3152P
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 250mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 900m Ω @ 430mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 175pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 4.5V
Rise Time 12ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 12 ns
Turn-Off Delay Time 35 ns
Continuous Drain Current (ID) 430mA
Gate to Source Voltage (Vgs) 6V
Drain Current-Max (Abs) (ID) 0.43A
Drain-source On Resistance-Max 0.9Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Feedback Cap-Max (Crss) 20 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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