NTMFD4901NFT3G
RoHS 
RoHS compliant
RoHS compliantPackage 8-PowerTDFN
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 30V 8DFN
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Technical Details
Technical
Pbfree Code yes
Part Status Active
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 115 mJ
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 100A
Drain-source On Resistance-Max 0.0035Ohm
Drain Current-Max (Abs) (ID) 13.5A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 17.9A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 9.7nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 10.3A 17.9A
Input Capacitance (Ciss) (Max) @ Vds 1150pF @ 15V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Rds On (Max) @ Id, Vgs 6.5m Ω @ 10A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual), Schottky
Power - Max 1.1W 1.2W
Case Connection DRAIN SOURCE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Pin Count 8
Terminal Form FLAT
Max Power Dissipation 1.2W
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Physical
Transistor Element Material SILICON
Number of Pins 8
Package / Case 8-PowerTDFN
Mounting Type Surface Mount
Mount Surface Mount
Supply Chain
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Factory Lead Time 7 Weeks
Compliance
Lead Free Lead Free
RoHS Status ROHS3 Compliant
Radiation Hardening No
Alternative Model
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