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NTMD6P02R2SG

ON Semiconductor
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description Tape & Reel (TR) Surface Mount 2P-Channel (Dual) Dual Mosfet Array 35nC @ 4.5V 4.8A 750mW 80ns
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Buying Options
Total Price: USD $4.84
Unit Price: USD $4.84405
≥1 USD $4.84405
≥10 USD $3.9748
≥100 USD $3.85035
≥500 USD $3.7259
≥1000 USD $3.6024
Inventory: 1153
Minimum: 1
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 750mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -7.8A
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTMD6P02
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 6.2A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 4.5V
Rise Time 65ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 4.8A
Gate to Source Voltage (Vgs) 12V
Drain Current-Max (Abs) (ID) 6.2A
Drain-source On Resistance-Max 0.033Ohm
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 450 pF

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

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