NTMD6N04R2G
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 30nC @ 10V 4.6A 1.5W 35ns
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Buying Options
Total Price: USD $0.55
Unit Price: USD $0.5529
≥1 USD $0.5529
≥10 USD $0.4541
≥100 USD $0.43985
≥500 USD $0.4256
≥1000 USD $0.41135
Inventory: 4482
Minimum: 1
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Technical Details
Technical
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Powers
Max Power Dissipation 1.5W
Terminal Form GULL WING
Base Part Number NTMD6N04
Pin Count 8
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
Turn On Delay Time 15 ns
Power - Max 1.29W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 34m Ω @ 5.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 55ns
Drain to Source Voltage (Vdss) 40V
Fall Time (Typ) 35 ns
Turn-Off Delay Time 30 ns
Continuous Drain Current (ID) 4.6A
Gate to Source Voltage (Vgs) 20V
Operating Temperature -55°C~150°C TJ
Drain-source On Resistance-Max 0.034Ohm
Drain to Source Breakdown Voltage 40V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Physical
Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 3 days ago)
Compliance
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
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