NTMD6N02R2
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount 2N-Channel (Dual) Dual Mosfet Array 20nC @ 4.5V 3.92A 730mW 80ns
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Buying Options
Total Price: USD $0.77
Unit Price: USD $0.77425
≥1 USD $0.77425
≥10 USD $0.63555
≥100 USD $0.6156
≥500 USD $0.59565
≥1000 USD $0.5757
Inventory: 7763
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 1 day ago)
Physical
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional Feature LOGIC LEVEL COMPATIBLE
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Max Power Dissipation 730mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 6A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NTMD6N02
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 2W
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 16V
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Rise Time 35ns
Fall Time (Typ) 80 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 3.92A
Gate to Source Voltage (Vgs) 12V
Drain-source On Resistance-Max 0.035Ohm
Drain to Source Breakdown Voltage 20V
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 360 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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