FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 350 mJ
Pulsed Drain Current-Max (IDM) 9A
Drain to Source Breakdown Voltage -16V
Drain-source On Resistance-Max 0.1Ohm
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 2.3A
Turn-Off Delay Time 33 ns
Drain to Source Voltage (Vdss) 16V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 2.4A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 710mW
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ