NTMD2C02R2SG
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
Tape & Reel (TR) Surface Mount N and P-Channel SEPARATE 2ELEMENTS WITH BUILT-IN DIODE Mosfet Array 5.2A 3.4A 3.4A 2W 35ns
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Buying Options
Total Price: USD $0.3
Unit Price: USD $0.298359
≥1 USD $0.298359
≥10 USD $0.28147
≥100 USD $0.265541
≥500 USD $0.250505
≥1000 USD $0.236325
Inventory: 1133
Minimum: 1
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 48A
Drain to Source Breakdown Voltage 20V
Drain-source On Resistance-Max 0.043Ohm
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 3.4A
Turn-Off Delay Time 35 ns
Fall Time (Typ) 35 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Rise Time 40ns
Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5.2A 3.4A
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 43m Ω @ 4A, 4.5V
Transistor Application SWITCHING
FET Type N and P-Channel
Power Dissipation 2W
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Number of Elements 2
Qualification Status Not Qualified
JESD-30 Code R-PDSO-G8
Pin Count 8
Time@Peak Reflow Temperature-Max (s) 40
Current Rating 5.2A
Peak Reflow Temperature (Cel) 260
Terminal Form GULL WING
Terminal Position DUAL
Max Power Dissipation 2W
Voltage - Rated DC 20V
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Mount Surface Mount
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