FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min 30V
Pulsed Drain Current-Max (IDM) 14A
Drain-source On Resistance-Max 0.135Ohm
Drain Current-Max (Abs) (ID) 2.7A
Continuous Drain Current (ID) 1.8A
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 4.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V
Vgs(th) (Max) @ Id 2V @ 250μA
Rds On (Max) @ Id, Vgs 135m Ω @ 4A, 10V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SINGLE WITH BUILT-IN DIODE
Qualification Status Not Qualified
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 700mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ