FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 60V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 295mA
Turn-Off Delay Time 34 ns
Drain to Source Voltage (Vdss) 60V
Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 26pF @ 20V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 1.6 Ω @ 500mA, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number NTJD5121N
Max Power Dissipation 250mW
Subcategory FET General Purpose Power
Additional Feature LOW THRESHOLD
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ