NTJD4401NT2
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Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
N-CHANNEL SEPARATE 2ELEMENTS WITH BUILT-IN DIODE AND RESISTOR 6 EAR99 Mosfet Array 0.63A 0.55W 20V 0.375Ohm
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Technical Details
Physical
Surface Mount YES
Number of Terminals 6
Transistor Element Material SILICON
Technical
JESD-609 Code e0
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory FET General Purpose Power
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) 30
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Polarity/Channel Type N-CHANNEL
Drain Current-Max (Abs) (ID) 0.63A
Drain-source On Resistance-Max 0.375Ohm
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.55W
Feedback Cap-Max (Crss) 5 pF
Compliance
RoHS Status Non-RoHS Compliant
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