NTJD4158CT1G
RoHS 
RoHS compliant
RoHS compliantPackage 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 30V/20V SOT-363
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Buying Options
Total Price: USD $0.13
Unit Price: USD $0.12625
≥1 USD $0.12625
≥10 USD $0.1191
≥100 USD $0.11236
≥500 USD $0.106
≥1000 USD $0.1
≥3000 USD $0.09434
Inventory: 35100
Minimum: 1
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Technical Details
Supply Chain
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Resistance 1.5Ohm
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 250mA
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number NTJD4158C
Pin Count 6
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
Turn On Delay Time 15 ns
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 33pF @ 5V
Current - Continuous Drain (Id) @ 25°C 250mA 880mA
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 5V
Rise Time 6.5 ns
Drain to Source Voltage (Vdss) 30V 20V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 3.5 ns
Turn-Off Delay Time 13.5 ns
Continuous Drain Current (ID) 880mA
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Dimensions
Height 1mm
Length 2.2mm
Width 1.35mm
Compliance
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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