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NTJD4105CT4

ON Semiconductor
RoHS
/
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V/8V SOT-363
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.21.00.95
Subcategory Other Transistors
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 235
Reach Compliance Code not_compliant
Current Rating 630mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NTJD4105C
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Current - Continuous Drain (Id) @ 25°C 630mA 775mA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Rise Time 23ns
Drain to Source Voltage (Vdss) 20V 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 36 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 775mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 1.1A
Drain-source On Resistance-Max 0.375Ohm
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 5 pF

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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