Feedback Cap-Max (Crss) 5 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -8V
Drain Current-Max (Abs) (ID) 1.1A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 775mA
Turn-Off Delay Time 50 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 20V 8V
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 630mA 775mA
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 375m Ω @ 630mA, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number NTJD4105C
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 270mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ