NTJD2152PT4G
RoHS
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Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2P-CH 8V 0.775A SOT-363
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Technical Details
Physical
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -8V
Max Power Dissipation 270mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -775mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number NTJD2152P
Pin Count 6
JESD-30 Code R-PDSO-G6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 270mW
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 570mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 8V
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Rise Time 23ns
Fall Time (Typ) 23 ns
Turn-Off Delay Time 50 ns
Continuous Drain Current (ID) 775mA
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 0.775A
Drain-source On Resistance-Max 0.3Ohm
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Feedback Cap-Max (Crss) 40 pF
Compliance
RoHS Status RoHS Compliant
Lead Free Lead Free
Alternative Model
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