Feedback Cap-Max (Crss) 40 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -8V
Drain-source On Resistance-Max 0.3Ohm
Drain Current-Max (Abs) (ID) 0.775A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 775mA
Turn-Off Delay Time 50 ns
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 225pF @ 8V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 300m Ω @ 570mA, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Qualification Status Not Qualified
Base Part Number NTJD2152P
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 235
Max Power Dissipation 270mW
Subcategory Other Transistors
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ