FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -8V
Gate to Source Voltage (Vgs) 1V
Continuous Drain Current (ID) 1.3A
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain to Source Voltage (Vdss) 8V
Vgs(th) (Max) @ Id 1V @ 250μA
Rds On (Max) @ Id, Vgs 175m Ω @ 1.2A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number NTJD1155
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 400mW
Subcategory Other Transistors
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ