NTJD1155LT1
RoHS
/
Package 6-TSSOP, SC-88, SOT-363
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET N/P-CH 8V 1.3A SOT-363
PDF
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Buying Options
Total Price: USD $0.19
Unit Price: USD $0.1881
≥1 USD $0.1881
≥10 USD $0.15485
≥100 USD $0.1501
≥500 USD $0.14535
≥1000 USD $0.1406
Inventory: 301598
Minimum: 1
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Technical Details
Supply Chain
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Physical
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Technical
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn80Pb20)
Subcategory Other Transistors
Voltage - Rated DC -8V
Max Power Dissipation 400mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating -1.3A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NTJD1155
Pin Count 6
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 400mW
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 175m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Drain to Source Voltage (Vdss) 8V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Continuous Drain Current (ID) 1.3A
Gate to Source Voltage (Vgs) 1V
Drain-source On Resistance-Max 0.175Ohm
Drain to Source Breakdown Voltage -8V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
Compliance
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
Alternative Model
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