FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 4.1A
Turn-Off Delay Time 32 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.9A
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 16V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Transistor Application SWITCHING
FET Type 2 P-Channel (Dual)
Turn On Delay Time 5.5 ns
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Base Part Number NTHD4102P
Time@Peak Reflow Temperature-Max (s) 40
Peak Reflow Temperature (Cel) 260
Max Power Dissipation 1.1W
Subcategory Other Transistors
Additional Feature LOGIC LEVEL COMPATIBLE
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ