NTHD3100CT3G
RoHS
/
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 20V +3.9A/-4.4A Complementary
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Technical Details
Compliance
Lead Free Lead Free
RoHS Status RoHS Compliant
Technical
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) 12A
Drain to Source Breakdown Voltage -20V
Drain Current-Max (Abs) (ID) 2.9A
Gate to Source Voltage (Vgs) 8V
Continuous Drain Current (ID) 3.2A
Turn-Off Delay Time 16 ns
Fall Time (Typ) 11.7 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Rise Time 11.7ns
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Transistor Application SWITCHING
FET Type N and P-Channel
Power Dissipation 1.1W
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Number of Elements 2
Qualification Status Not Qualified
Pin Count 8
Base Part Number NTHD3100C
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Current Rating 3.9A
Peak Reflow Temperature (Cel) NOT SPECIFIED
Terminal Form C BEND
Max Power Dissipation 1.1W
Voltage - Rated DC 20V
Subcategory Other Transistors
Terminal Finish Tin (Sn)
ECCN Code EAR99
Number of Terminations 8
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
JESD-609 Code e3
Published 2006
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Physical
Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-SMD, Flat Lead
Mounting Type Surface Mount
Alternative Model
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