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NTHD3100CT1

ON Semiconductor
RoHS
/
Package 8-SMD, Flat Lead
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description MOSFET N/P-CH 20V CHIPFET
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Buying Options
Total Price: USD $0.51
Unit Price: USD $0.512065
≥1 USD $0.512065
≥10 USD $0.483078
≥100 USD $0.455738
≥500 USD $0.429946
≥1000 USD $0.405607
Inventory: 1093
Minimum: 1
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Technical Details

Supply Chain

Lifecycle Status OBSOLETE (Last Updated: 4 days ago)

Physical

Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Surface Mount YES
Number of Pins 8
Transistor Element Material SILICON

Technical

Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 20V
Max Power Dissipation 1.1W
Terminal Form C BEND
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating 3.9A
Time@Peak Reflow Temperature-Max (s) 30
Base Part Number NTHD3100C
Pin Count 8
Qualification Status Not Qualified
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.1W
FET Type N and P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 80m Ω @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.9A 3.2A
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V
Rise Time 11.7 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Fall Time (Typ) 11.7 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 3.2A
Gate to Source Voltage (Vgs) 8V
Drain Current-Max (Abs) (ID) 2.9A
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 12A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

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