Drain to Source Breakdown Voltage 50V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 25V
Vgs(th) (Max) @ Id 4V @ 250μA
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
FET Type 2 N-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 900mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ