FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 130m Ω @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
FET Feature Logic Level Gate
Element Configuration Dual
Max Power Dissipation 900mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ