FET Feature Logic Level Gate
Drain to Source Breakdown Voltage -20V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) -3.5A
Turn-Off Delay Time 14 ns
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.5A
Input Capacitance (Ciss) (Max) @ Vds 542pF @ 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 100m Ω @ 3.5A, 10V
FET Type 2 P-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 900mW
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ