FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 50V
Drain Current-Max (Abs) (ID) 0.51A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 510mA
Turn-Off Delay Time 11 ns
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 20pF @ 25V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Rds On (Max) @ Id, Vgs 2 Ω @ 510mA, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Element Configuration Dual
Max Power Dissipation 700mW
Subcategory FET General Purpose Power
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ