MVDF1N05ER2G
RoHS
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Package 8-SOIC (0.154, 3.90mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 50V 2A 8SOIC
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Technical Details
Technical
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LOGIC LEVEL COMPATIBLE, ULTRA LOW ON RESISTANCE
Subcategory FET General Purpose Power
Max Power Dissipation 2W
Terminal Form GULL WING
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
FET Type 2 N-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Drain to Source Voltage (Vdss) 50V
Continuous Drain Current (ID) 2A
Drain Current-Max (Abs) (ID) 2A
Drain-source On Resistance-Max 0.3Ohm
Pulsed Drain Current-Max (IDM) 10A
DS Breakdown Voltage-Min 50V
Avalanche Energy Rating (Eas) 300 mJ
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Part Status Obsolete
JESD-609 Code e3
Published 2012
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
Compliance
RoHS Status RoHS Compliant
Physical
Transistor Element Material SILICON
Number of Pins 8
Surface Mount YES
Package / Case 8-SOIC (0.154, 3.90mm Width)
Mounting Type Surface Mount
Alternative Model
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