Feedback Cap-Max (Crss) 96 pF
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 40V
Drain Current-Max (Abs) (ID) 3.4A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 3A
Turn-Off Delay Time 15 ns
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
Current - Continuous Drain (Id) @ 25°C 3.4A
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 32V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 80m Ω @ 3.4A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number MMDF3N04HD
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Max Power Dissipation 1.39W
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)