FET Technology METAL-OXIDE SEMICONDUCTOR
Avalanche Energy Rating (Eas) 300 mJ
Pulsed Drain Current-Max (IDM) 10A
Drain to Source Breakdown Voltage 50V
Drain-source On Resistance-Max 0.3Ohm
Drain Current-Max (Abs) (ID) 2A
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 2A
Turn-Off Delay Time 40 ns
Gate Charge (Qg) (Max) @ Vgs 12.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
Vgs(th) (Max) @ Id 3V @ 250μA
Rds On (Max) @ Id, Vgs 300m Ω @ 1.5A, 10V
Transistor Application SWITCHING
FET Type 2 N-Channel (Dual)
Operating Mode ENHANCEMENT MODE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Qualification Status Not Qualified
Base Part Number MMDF1N05E
Time@Peak Reflow Temperature-Max (s) 30
Reach Compliance Code not_compliant
Peak Reflow Temperature (Cel) 240
Subcategory FET General Purpose Power
Additional Feature LOGIC LEVEL COMPATIBLE
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Terminal Finish Tin/Lead (Sn/Pb)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Feature Logic Level Gate