FET Feature Logic Level Gate, 4V Drive
Drain to Source Breakdown Voltage -50V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 140mA
Turn-Off Delay Time 100 ns
Drain to Source Voltage (Vdss) 50V
Gate Charge (Qg) (Max) @ Vgs 1.32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6.2pF @ 10V
Rds On (Max) @ Id, Vgs 22 Ω @ 40mA, 10V
FET Type 2 P-Channel (Dual)
Max Power Dissipation 800mW
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ