Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin/Bismuth (Sn/Bi)
Subcategory FET General Purpose Power
Max Power Dissipation 800mW
Element Configuration Dual
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 7.8 Ω @ 50mA, 4V
Input Capacitance (Ciss) (Max) @ Vds 6.6pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 1.57nC @ 10V
Drain to Source Voltage (Vdss) 50V
Turn-Off Delay Time 190 ns
Continuous Drain Current (ID) 250mA
Gate to Source Voltage (Vgs) 10V
Drain to Source Breakdown Voltage 50V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate