FET Feature Logic Level Gate
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 10V
Continuous Drain Current (ID) 350mA
Turn-Off Delay Time 155 ns
Drain to Source Voltage (Vdss) 30V
Gate Charge (Qg) (Max) @ Vgs 1.58nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 7pF @ 10V
Rds On (Max) @ Id, Vgs 3.7 Ω @ 80mA, 4V
FET Type 2 N-Channel (Dual)
Element Configuration Dual
Max Power Dissipation 800mW
Terminal Finish Tin/Bismuth (Sn/Bi)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ