FET Feature Logic Level Gate
Drain to Source Breakdown Voltage 30V
Gate to Source Voltage (Vgs) 20V
Continuous Drain Current (ID) 10A
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Current - Continuous Drain (Id) @ 25°C 10A 8A
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 10V
Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V
Element Configuration Dual
Max Power Dissipation 2.3W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ