FW812-TL-E
RoHS
/
Package 8-SOIC (0.173, 4.40mm Width)
Category Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Arrays
Description
MOSFET 2N-CH 35V 10A 8SOP
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Technical Details
Compliance
RoHS Status RoHS Compliant
Technical
FET Feature Logic Level Gate
Continuous Drain Current (ID) 10A
Drain to Source Voltage (Vdss) 35V
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 960pF @ 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA
Rds On (Max) @ Id, Vgs 17m Ω @ 10A, 10V
FET Type 2 N-Channel (Dual)
Power - Max 2.5W
Max Power Dissipation 2.5W
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Part Status Obsolete
Published 2010
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
Physical
Package / Case 8-SOIC (0.173, 4.40mm Width)
Mounting Type Surface Mount
Mount Surface Mount
Alternative Model
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