Drain to Source Resistance 17mOhm
FET Feature Logic Level Gate
Input Capacitance 1.082nF
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 5.5A
Turn-Off Delay Time 24 ns
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 5.5A
Input Capacitance (Ciss) (Max) @ Vds 1082pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 21mOhm @ 5.5A, 4.5V
FET Type 2 N-Channel (Dual)
Max Power Dissipation 600mW
Min Operating Temperature -55°C
Max Operating Temperature 150°C
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ