FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Gate Charge (Qg) (Max) @ Vgs 21nC @ 5V
Current - Continuous Drain (Id) @ 25°C 4.4A
Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 35mOhm @ 4.4A, 4.5V
FET Type 2 P-Channel (Dual)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ