Moisture Sensitivity Level (MSL) 1 (Unlimited)
Packaging Tape & Reel (TR)
Operating Temperature -55°C~150°C TJ
FET Feature Logic Level Gate
FET Technology METAL-OXIDE SEMICONDUCTOR
Drain to Source Breakdown Voltage 20V
Gate to Source Voltage (Vgs) 12V
Continuous Drain Current (ID) 6.5A
Turn-Off Delay Time 25 ns
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V
Current - Continuous Drain (Id) @ 25°C 6.5A 5A
Input Capacitance (Ciss) (Max) @ Vds 650pF @ 10V
Vgs(th) (Max) @ Id 1.5V @ 250μA
Rds On (Max) @ Id, Vgs 30m Ω @ 6.5A, 4.5V
Transistor Application SWITCHING
Operating Mode ENHANCEMENT MODE
Subcategory Other Transistors